STMicroelectronics and Hynix Semiconductor, two of the world's largest semiconductor manufacturers, today officially opened their joint front-end memory-manufacturing facility in Wuxi City, Jiangsu Province, China. The new leading-edge facility, which will manufacture both NAND Flash and DRAM memories, is the result of the existing successful collaboration between Hynix and ST. Both partners will benefit from significant economies of scale, front-row access to the rapidly-growing Chinese market, and their complementary strengths in process and product development. The Wuxi fab will accelerate ST's advancement in the NAND Flash market, as well as provide high-performance, cost-competitive DRAM chips for use in system embedded solutions, stacked with Flash Memories. The new fab will expand Hynix's 300mm manufacturing capacity and strengthen its leading position in the world's fastest-growing Chinese semiconductor market. Hynix currently holds the number one position of DRAM sales in China with a market share of approximately 47 percent, based on the most recent data from iSuppli. "In 2005, the NAND Flash market grew faster than any segment in the history of the semiconductor market, driven by a spiraling demand for storage space in mobile phones, digital cameras, and portable audio players," said Mario Licciardello, STMicroelectronics' Corporate Vice President and General Manager of the Memory Product Group.

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